Infineon IRLHM630TRPBF
$ 0.426
Obsolete
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Inventory History
3 month trend: +15.32%
CAD Models
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Alternate Parts
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CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-11-03
Lifecycle StatusObsolete (Last Updated: 8 months ago)
Related Parts
InfineonIRLHM620TRPBF
Single N-Channel 20 V 3.5 mOhm 52 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
InfineonIRFHM830DTRPBF
30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PG-TSDSON-8, RoHS
InfineonIRFH5304TRPBF
Single N-Channel 30 V 4.5 mOhm 16 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
Descriptions
Descriptions of Infineon IRLHM630TRPBF provided by its distributors.
INFINEON IRLHM630TRPBF MOSFET Transistor, N Channel, 21 A, 30 V, 2.8 mohm, 4.5 V, 800 mV
30V Single N-Channel HEXFET Power MOSFET in a PQFN 3.3 by 3.3 package, PG-TSDSON-8, RoHS
Infineon SCT
Single N-Channel 20 V 4.5 mOhm 41 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
Battery Operated DC Motor Inverter MOSFET | MOSFET N-CH 30V 21A PQFN
Power MOSFET, N Channel, 30 V, 21 A, 0.0028 ohm, QFN, Surface Mount
Infineon N-Ch MOSFET Vds=30V 40A PQFN 3.3mm x 3.3mm TH
HEXFET POWER MOSFET Power Field-Effect Transistor, 21A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET,N CH,DIODE,30V,21A,PQFN33; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2800µohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:2.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (18-Jun-2012); Current Id Max:21A; Voltage Vgs Max:12V
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 40 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 4.5 / Gate-Source Voltage V = 12 / Fall Time ns = 43 / Rise Time ns = 32 / Turn-OFF Delay Time ns = 65 / Turn-ON Delay Time ns = 9.1 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = PQFN / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 37
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +15.32%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageVQFN
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)21 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance4.5 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time43 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance3.17 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation37 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs800 mV
Number of Channels1
Number of Elements1
On-State Resistance3.5 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2.7 W
Rds On Max3.5 mΩ
Resistance4.5 MΩ
Rise Time32 ns
Schedule B8541290080
Threshold Voltage800 mV
Turn-Off Delay Time65 ns
Turn-On Delay Time9.1 ns
Dimensions
Height900 µm
Length3.3 mm
Width3.3 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
Compliance Statements