onsemi FDMS039N08B
$ 1.157
Production
Inventory History
3 month trend: -3.73%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2011-09-09
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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80V N-CHANNEL POWER TRANSISTOR FOR HIGH-FREQUENCY SWITCHING AND DC-DC CONVERTERS
Descriptions
Descriptions of onsemi FDMS039N08B provided by its distributors.
N-Channel PowerTrench® MOSFET 80V, 100A, 3.9mΩ
N-CHANNEL POWER TRENCH MOSFET Power Field-Effect Transistor, 19.4A I(D), 80V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: -3.73%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight68.1 mg
Technical
Continuous Drain Current (ID)19.4 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance3.9 mΩ
Drain to Source Voltage (Vdss)80 V
Element ConfigurationSingle
Fall Time17 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance7.6 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation104 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation2.5 W
Rds On Max3.9 mΩ
Rise Time25 ns
Schedule B8541290080
Turn-Off Delay Time48 ns
Turn-On Delay Time42 ns
Dimensions
Height1.1 mm
Length5 mm
Width6 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements