onsemi FDMS86310
$ 1.394
Production
Inventory History
3 month trend: -16.78%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2012-01-31
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Descriptions
Descriptions of onsemi FDMS86310 provided by its distributors.
Trans MOSFET N-CH Si 80V 17A 8-Pin PQFN EP T/R / MOSFET N-CH 80V 17A 8-PQFN
Single N-Channel 80 V 7.2 mOhm 78 nC 96 W PowerTrench SMT Mosfet - POWER 56-8
N-CHANNEL POWERTRENCH MOSFET Power Field-Effect Transistor, 17A I(D), 80V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and bodydiode reverse recovery performance.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: -16.78%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight68.1 mg
Technical
Continuous Drain Current (ID)17 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance4.8 mΩ
Drain to Source Voltage (Vdss)80 V
Element ConfigurationSingle
Fall Time9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.29 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation96 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rds On Max4.8 mΩ
Rise Time23 ns
Turn-Off Delay Time35 ns
Turn-On Delay Time28 ns
Dimensions
Height1.1 mm
Length5.1 mm
Width5.85 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements