onsemi FDMC89521L
$ 0.8
Production
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Inventory History
3 month trend: -26.34%
CAD Models
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Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2012-08-07
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Related Parts
Descriptions
Descriptions of onsemi FDMC89521L provided by its distributors.
Dual N-Channel PowerTrench® MOSFET 60V, 8.2A, 17mΩ
Transistor MOSFET Array Dual N-CH 60V 8.2A 8-Pin Power 33 T/R
Avnet Japan
This device includes two 60 V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package. The package is enhanced for exceptional thermal performance.
MOSFET, DUAL N-CH, 60V, 8.2A, POWER33; Transistor Polarity: N Channel; Continuous Drain Current Id: 8.2A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.013ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: -26.34%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
MountSurface Mount
Number of Pins8
Number of Terminals4
Weight196 mg
Technical
Continuous Drain Current (ID)8.2 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance17 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationDual
Fall Time1.7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.635 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.9 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Power Dissipation1.9 W
Rds On Max17 mΩ
Resistance17 MΩ
Rise Time2.1 ns
Schedule B8541290080
Turn-Off Delay Time18 ns
Turn-On Delay Time7.9 ns
Dimensions
Height800 µm
Length3 mm
Width3 mm
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements