onsemi FDMC86160

Name: onsemi FDMC86160
Brand: onsemi
SKU: FDMC86160

MOSFET, N-CH, 100V, 8PQFN; Transistor Polarity: N Channel; Continuous Drain Curre

$ 1.23

Production

Manufacturer Page Datasheet

Price and Stock

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Distributor		SKU		Min	Pkg
Avnet	2	FDMC86160	336,152	3K						1d
Future Electronics		FDMC86160	3,000	3K	Tape & Reel				1.540
Newark	2	FDMC86160	1,410	5	Cut Tape	2.070	1.460	1.230	1.230
Master Electronics		FDMC86160	2,320	25			1.890	1.230	1.010
Onlinecomponents.com		FDMC86160	2,320	25	Bulk		1.890	1.230	1.010

Inventory History

3 month trend: +10.89%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDMC86160.

IHS

Datasheet7 pages3 years ago

Datasheet5 pages15 years ago

JRH Electronics

Upverter

onsemi

Fairchild Semiconductor

Inventory History

3 month trend:

+10.89%

CAD Models

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Component Search Engine	SymbolFootprint	3D	Download
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SnapEDA	Footprint		Download

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Supply Chain

Country of OriginPhilippines

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2012-06-11

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FDMC86160 provided by its distributors.

MOSFET, N-CH, 100V, 8PQFN; Transistor Polarity:N Channel; Continuous Drain Curre

Newark

N-Channel Power Trench MOSFET 100 V, 43 A, 14 m Ohm | MOSFET N CH 100V 9A POWER33

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ON SEMICONDUCTOR - FDMC86160 - MOSFET Transistor, N Channel, 43 A, 100 V, 0.0112 ohm, 10 V, 2.9 V

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N-Channel Power Trench® MOSFET 100V, 43A, 14mΩ

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Power Field-Effect Transistor, 9A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA

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This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for applications where ulta low RDS(on) is required in small spaces such as High performance VRM, POL and orring functions.

Fairchild Semiconductor

MOSFET, N-CH, 100V, 8PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:43A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0112ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.9V; Power Dissipation Pd:54W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:Power 33; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C

Farnell