onsemi FDMC6675BZ

Name: onsemi FDMC6675BZ
Brand: onsemi
SKU: FDMC6675BZ

P-Channel Power Trench® MOSFET -30V, -20A, 14.4mΩ

$ 0.508

NRND

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
Avnet	2	FDMC6675BZ	42,000	2084						0.420	6d
Verical	5	FDMC6675BZ	354	13				0.178	0.175	0.175
Arrow Electronics		FDMC6675BZ	2,985	1		1.387	0.684	0.570	0.483	0.483
Rochester Electronics		FDMC6675BZ	204,553					0.592	0.491	0.438	2d
DigiKey	3	FDMC6675BZCT-ND	2,558	1	Cut Tape	1.870	1.187	0.796	0.574	0.574

Inventory History

3 month trend: -0.00%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDMC6675BZ.

IHS

Datasheet8 pages2 years ago

Datasheet0 pages0 years ago

Upverter

Master Electronics

element14 APAC

onsemi

Inventory History

3 month trend:

-0.00%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2008-12-12

Lifecycle StatusNRND (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE, NOT REC (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FDMC6675BZ provided by its distributors.

P-Channel Power Trench® MOSFET -30V, -20A, 14.4mΩ

onsemi

P-Channel 30 V 20 A 14.4 mOhm 36 W SMT MOSFET - PowerWDFN-8

Future Electronics

Trans MOSFET P-CH Si 30V 9.5A 8-Pin WDFN EP T/R

Richardson RFPD

Power Field-Effect Transistor, 9.5A I(D), 30V, 0.0144ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

2.3W(Ta),36W(Tc) 25V 3V@ 250¦ÌA 65nC@ 10 V 1P 30V 14.4m¦¸@ 9.5A,10V 9.5A,20A 2.865nF@15V MLP-8 3.3mm*3.3mm*730¦Ìm

UnikeyIC

The FDMC6675BZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on) and ESD protection.

Fairchild Semiconductor

MOSFET, P CH, 30V, 20A, MLP 3.3X3.3; Transistor Polarity:P Channel; Continuous Drain Current Id:-20A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0107ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.9V; Power Dissipation Pd:36W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MLP; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

Farnell