onsemi FDMA86251
$ 0.519
Production
Inventory History
3 month trend: -100%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2015-03-27
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 185 Milliohms;ID 2.6A;SOT-223;PD 2.8W;-55de
Descriptions
Descriptions of onsemi FDMA86251 provided by its distributors.
N-Channel PowerTrench® MOSFET 150V, 2.4A, 175mΩ
MV5 150V/20V single n-channel powertrench MOSFET - 6LD,MLP,DUAL,NON-JEDEC,2MM SQUARE,SINGLE TIED DAP
MOSFET, N-CH, 150V, 2.4A, 2.4W, WDFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.4A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.148ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.
This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The low rDS(on) and gate charge provide excellent switching performance.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: -100%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
MountSurface Mount
Number of Terminals6
Weight30 mg
Technical
Continuous Drain Current (ID)2.4 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance175 mΩ
Drain to Source Voltage (Vdss)150 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance363 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.4 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation2.4 W
Rds On Max175 mΩ
Schedule B8541290080
Turn-Off Delay Time10 ns
Turn-On Delay Time5.9 ns
Dimensions
Height800 µm
Compliance
Environmental Classification
China RoHSCompliant
REACH SVHCYes
RoHSCompliant
Compliance Statements