onsemi FDMA7672
$ 0.314
Production
Inventory History
3 month trend: -7.52%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Lifecycle StatusProduction (Last Updated: 1 week ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 1 week ago)
Descriptions
Descriptions of onsemi FDMA7672 provided by its distributors.
N-Channel PowerTrench® MOSFET 30V, 9A, 21mΩ
N-Channel 30 V 9 A 2.4 W Surface Mount Power Trench MOSFET - MicroFET-6 (2x2)
Single PT7, Nch, 30/20V in MLP 2x2 - 6LD,MLP,DUAL,JEDEC MO-229, 2MM SQUARE (FUSED PIN 5 TO DAP)
Trans MOSFET N-CH 30V 9A 6-Pin MicroFET EP T/R
2.4W(Ta) 20V 3V@ 250µA 13nC@ 10 V 1individualNChannel 30V 21mΩ@ 9A,10V 9A 760pF@15V MICROFET-6 SMD mount 2mm*2mm*750μm
Small Signal Field-Effect Transistor, 9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N-Channel MOSFET 30V 9A 21m¦¸ Surface Mount
SMALL SIGNAL FIELD-EFFECT TRANSI
This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The low rDS(on) and gate charge provide excellent switching performance.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: -7.52%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight30 mg
Technical
Continuous Drain Current (ID)9 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance21 mΩ
Drain to Source Voltage (Vds)30 V
Element ConfigurationSingle
Fall Time2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance760 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.4 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation900 mW
Rds On Max21 mΩ
Rise Time2 ns
Schedule B8541290080
Turn-Off Delay Time14 ns
Turn-On Delay Time6 ns
Dimensions
Height800 µm
Length2 mm
Width2 mm
Compliance
Environmental Classification
China RoHSCompliant
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
Compliance Statements