onsemi FDMA7628
$ 0.254
Obsolete
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2012-05-30
Lifecycle StatusObsolete (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
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Descriptions
Descriptions of onsemi FDMA7628 provided by its distributors.
Single N-Channel 1.5 V Specified PowerTrench® MOSFET 20V, 9.4A, 14.5mΩ
Single N-Channel 20 V 1.9 W 17.5 nC Silicon Surface Mount Mosfet - MICROFET-2x2
1.9W(Ta) 8V 1V@ 250µA 17.5nC@ 4.5 V 1individualNChannel 20V 14.5mΩ@ 9.4A,4.5V 9.4A 1.68nF@10V MICROFET-6 SMD mount 2mm*2mm*750μm
This Single N-Channel MOSFET has been designed using Fairchild Semiconductor's advanced Power Trench® process to optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET leadframe.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight30 mg
Technical
Continuous Drain Current (ID)9.4 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance14.5 mΩ
Drain to Source Voltage (Vds)20 V
Element ConfigurationSingle
Fall Time11 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance1.68 nF
Max Operating Temperature150 °C
Max Power Dissipation1.9 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation1.9 W
Rds On Max14.5 mΩ
Rise Time11 ns
Turn-Off Delay Time37 ns
Turn-On Delay Time9 ns
Dimensions
Height750 µm
Length2 mm
Width2 mm
Compliance
Environmental Classification
China RoHSCompliant
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
Compliance Statements