onsemi FDMA0104
$ 0.37
Related Parts
Diodes Inc.DMN2013UFDE-7
Power MOSFET, N Channel, 20 V, 10.5 A, 0.0084 ohm, U-DFN2020, Surface Mount
VishaySI7232DN-T1-GE3
SI7232DN-T1-GE3 Dual N-channel MOSFET Transistor; 24 A; 20V; 8-Pin PowerPAK 1212
Descriptions
Descriptions of onsemi FDMA0104 provided by its distributors.
20V Single N-Channel 1.5 V Specified PowerTrench® MOSFET
Trans MOSFET N-CH 20V 9.4A 6-Pin MicroFET T/R
1.9W(Ta) 1V@ 250µA 17.5nC@ 4.5V 1individualNChannel 20V 14.5mΩ@ 9.4A,4.5V 1.68pF@10V MICROFET-6 SMD mount
MOSFET N-CH 20V 9.4A 6MICROFET
This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench® process to optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET leadframe.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Technical Specifications
Physical
MountSurface Mount
Number of Pins6
Weight30 mg
Technical
Continuous Drain Current (ID)9.4 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance11.3 mΩ
Drain to Source Voltage (Vds)20 V
Element ConfigurationSingle
Fall Time6 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance1.68 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation700 mW
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation700 mW
Rds On Max14.5 mΩ
Rise Time6 ns
Turn-Off Delay Time37 ns
Turn-On Delay Time9 ns
Dimensions
Height800 µm
Length2 mm
Width2 mm