onsemi FDMA1023PZ

Name: onsemi FDMA1023PZ
Brand: onsemi
SKU: FDMA1023PZ

PowerTrench® MOSFET, Dual P-Channel, -20V , -3.7A, 72mΩ

$ 0.42

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Distributor		SKU		Min	Pkg
Future Electronics		FDMA1023PZ	6,000	3K	Tape & Reel					0.445
Newark		FDMA1023PZ	5,353	1		1.370	0.862	0.570	0.404	0.404
Verical		FDMA1023PZ	838,904	822					0.421	0.375
Rochester Electronics		FDMA1023PZ	839,193					0.406	0.337	0.300	2d
DigiKey	3	FDMA1023PZCT-ND	7,771	1	Cut Tape	1.420	0.896	0.592	0.420	0.420

Inventory History

3 month trend: -1.17%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDMA1023PZ.

IHS

Datasheet7 pages3 years ago

Datasheet0 pages0 years ago

Upverter

Master Electronics

Fairchild Semiconductor

onsemi

Inventory History

3 month trend:

-1.17%

CAD Models

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Supply Chain

Country of OriginThailand

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2007-03-19

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FDMA1023PZ provided by its distributors.

PowerTrench® MOSFET, Dual P-Channel, -20V , -3.7A, 72mΩ

onsemi

Transistor MOSFET Array Dual P-CH 20V 3.7A 6-Pin MicroFET T/R

Avnet Japan

FDMA1023PZ Series -20 V -3.7 A 72 mOhm Dual P-Ch. PowerTrench® MOSFET-MicroFET-6

Future Electronics

Small Signal Field-Effect Transistor, 3.7A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-229VCCC

IHS

MOSFET, DUAL P CH, -20V, -3.7A, MICROFET; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-3.7A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.06ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-700mV; Power Dissipation Pd:1.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:µFET; No. of Pins:6; MSL:-; SVHC:No SVHC (20-Jun-2013)

Farnell

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.

Fairchild Semiconductor