onsemi FDD6680AS

Name: onsemi FDD6680AS
Brand: onsemi
SKU: FDD6680AS

N-Channel PowerTrench® SyncFET™ MOSFET, 30V, 55A, 10.5mΩ

$ 0.594

Obsolete

Manufacturer Page Datasheet

Price and Stock

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Non-Authorized Stocking Distributors

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Distributor		SKU		Min	Pkg
Verical	2	FDD6680AS	6,993	472					0.661	0.589
Rochester Electronics	2	FDD6680AS	9,341					0.637	0.528	0.471	2h
element14 APAC	2	FDD6680AS	0	1	Cut Tape	1.023*	0.804*	0.681*	0.497*	0.475*	15h
Farnell	2	FDD6680AS	0	1	Cut Tape	0.905*	0.877*	0.712*	0.533*	0.533*	2h
Win Source		WS-FDD6680AS	24,200	75				0.784	0.522	0.522	3h

Inventory History

3 month trend: +0.00%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDD6680AS.

Upverter

Technical Drawing1 page3 years ago

IHS

Future Electronics

onsemi

Farnell

Inventory History

3 month trend:

+0.00%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiFDD6680AS

onsemiFDD6680S

Price @ 1000

$ 0.594

$ 1.328

Stock

245,693

219,596

Authorized Distributors

Mount

Surface Mount

Case/Package

TO-252

Drain to Source Voltage (Vdss)

30 V

Continuous Drain Current (ID)

55 A

Threshold Voltage

1.4 V

Rds On Max

10.5 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

1.3 W

60 W

Input Capacitance

1.2 nF

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2005-02-24

Lifecycle StatusObsolete (Last Updated: 2 days ago)

LTB Date2021-02-17

LTD Date2021-08-17

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 2 days ago)

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Descriptions

Descriptions of onsemi FDD6680AS provided by its distributors.

N-Channel PowerTrench® SyncFET™ MOSFET, 30V, 55A, 10.5mΩ

onsemi

N-Channel 30 V 55 A 10.5 mO Surface Mount PowerTrench Mosfet - DPAK

Future Electronics

Power Field-Effect Transistor, 55A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

IHS

MOSFET, N, SMD, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:30V; On Resistance Rds(on):10.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.4V; Power Dissipation Pd:60mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:55A; Package / Case:DPAK; Power Dissipation Pd:60mW; Pulse Current Idm:100A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

element14 APAC

The FDD6680AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6680AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDD6680AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDD6680A in parallel with a Schottky diode.

Fairchild Semiconductor