onsemi FDD6612A

Name: onsemi FDD6612A
Brand: onsemi
SKU: FDD6612A

N-Channel PowerTrench® MOSFET, 30V, 30A, 20mΩ

$ 0.524

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min
Verical	12	FDD6612A	2,350	594				0.583	0.520
Rochester Electronics	2	FDD6612A	254,973				0.562	0.466	0.416	18h
Farnell		FDD6612A	0	1	1.056*	1.056*	0.710*	0.710*	0.710*	13h
Component Stockers USA		FDD6612A	299,897		0.490	0.490	0.460	0.410	0.410	>1wk
Win Source		WS-FDD6612A	10,900	80			0.742	0.495	0.495	19h

Inventory History

3 month trend: -0.95%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDD6612A.

Farnell

Datasheet0 pages0 years ago

Datasheet6 pages22 years ago

Datasheet0 pages0 years ago

IHS

onsemi

element14 APAC

Fairchild Semiconductor

Inventory History

3 month trend:

-0.95%

Alternate Parts

This Part

Alternate Parts

onsemiFDD6612A

onsemiISL9N327AD3ST

Price @ 1000

$ 0.524

$ 0.617

Stock

1,862,584

12,500

Authorized Distributors

Mount

Surface Mount

Case/Package

TO-252

Drain to Source Voltage (Vdss)

30 V

Continuous Drain Current (ID)

9.5 A

20 A

Threshold Voltage

2 V

Rds On Max

20 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

36 W

50 W

Input Capacitance

660 pF

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1999-02-01

Lifecycle StatusObsolete (Last Updated: 2 days ago)

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 2 days ago)

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Descriptions

Descriptions of onsemi FDD6612A provided by its distributors.

N-Channel PowerTrench® MOSFET, 30V, 30A, 20mΩ

onsemi

N-Channel 30 V 20 mOhm Surface Mount PowerTrench Mosfet TO-252-3

Future Electronics

30V N-CHANNEL POWER TRENCH MOSFET Power Field-Effect Transistor, 9.5A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

ComSIT Distribution GmbH

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:30A; On Resistance, Rds(on):20mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252 ;RoHS Compliant: Yes

Newark

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package.

Fairchild Semiconductor