UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Fairchild Semiconductor

Manufacturer Aliases

onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:

ON Semiconductor
ONS
ONSEMICON
ON SEM
ON SEMICONDUCTO
ON SEMICONDUCTORS
ONSEMIC
ON Semicondu
OSC
ONSE
ON SEMICOND
ON Semiconductor / Fairchild
SCG
ON Semiconductor Cor
ON SEMICO
ONSM
ON SEMICONDUCTOR CORP
onsemi / Fairchild
MOT/ON SEMI
Fairchild/ONSemiconductor
ON Semiconductor Corporation
ON4
ON Semi - ON Semiconductor
ON SEMICONDUCT
ON-SEMI SCG
ON Semiconductor Inc.
onsemiconductor
On Semiconductor Ltd

Part Number Aliases

This part may be known by these alternate part numbers:

FDD5N50FTMWS
FDD5N50FTM_WS

Inventory History

3 month trend: -14.29%

Technical Specifications

Physical

Case/PackageDPAK

MountSurface Mount

Number of Pins3

Number of Terminals2

Weight260.37 mg

Technical

Continuous Drain Current (ID)3.5 A

Drain to Source Breakdown Voltage500 V

Drain to Source Resistance1.55 Ω

Drain to Source Voltage (Vdss)500 V

Element ConfigurationSingle

Fall Time20 ns

Gate to Source Voltage (Vgs)30 V

Input Capacitance650 pF

Max Operating Temperature150 °C

Max Power Dissipation40 W

Min Breakdown Voltage500 V

Min Operating Temperature-55 °C

Number of Elements1

Power Dissipation40 W

Rds On Max1.55 Ω

Rise Time22 ns

Turn-Off Delay Time28 ns

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDD5N50FTM-WS.

IHS

Datasheet8 pages4 years ago

Farnell

onsemi

Fairchild Semiconductor

Compliance

Environmental Classification

China RoHSNon-Compliant

REACH SVHCNo

RoHSCompliant

Compliance Statements

Rohs Statement3 pages5 years ago

Reach Statement4 pages9 years ago

Materials Sheet3 pages9 years ago

Reach Statement8 pages11 years ago

Rohs Statement1 page13 years ago

Rohs Statement1 page14 years ago

Reach Statement2 pages13 years ago

Rohs StatementN/AN/A