onsemi FDC6420C

Name: onsemi FDC6420C
Brand: onsemi
SKU: FDC6420C

ON SEMICONDUCTOR - FDC6420C - Dual MOSFET, N and P Channel, 3 A, 20 V, 0.05 ohm, 4.5 V, 900 mV

$ 0.303

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Distributor		SKU		Min	Pkg
Future Electronics	4	FDC6420C	300,000	3K	Tape & Reel				0.290
Avnet		FDC6420C	6,000	3K					0.221	4d
Newark	3	FDC6420C	1	5	Cut Tape	0.642	0.409	0.323	0.323
Arrow Electronics		FDC6420C	6,000	3K					0.212
Verical		FDC6420C	6,000	3K					0.213

Inventory History

3 month trend: -14.39%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDC6420C.

IHS

Datasheet10 pages3 years ago

Datasheet8 pages0 years ago

Upverter

element14 APAC

Farnell

onsemi

Inventory History

3 month trend:

-14.39%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2001-07-06

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FDC6420C provided by its distributors.

ON SEMICONDUCTOR - FDC6420C - Dual MOSFET, N and P Channel, 3 A, 20 V, 0.05 ohm, 4.5 V, 900 mV

SHENGYU ELECTRONICS

Dual N/P-Channel 20 V 70 mOhm Surface Mount PowerTrench Mosfet - SSOT-6

Future Electronics

Small Signal Field-Effect Transistor, 3A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

MOSFET, DUAL, NP, SMD, SUPERSOT-6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:20V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:900mV; Power Dissipation Pd:960mW; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Current Id Max:3A; Package / Case:SuperSOT-6; Power Dissipation Pd:960mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:900mV; Voltage Vgs Rds on Measurement:4.5V

element14 APAC

These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

Fairchild Semiconductor