Infineon IRLMS6702TRPBF

MOSFET P-CH 20V 2.4A MICRO6 P-Channel 20 V 2.4A (Ta) 1.7W (Ta) Surface Mount Micro6™(TSOP-6)

-20V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package, TSOP6L, RoHS

MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 0.2Ohm;ID -2.4A;Micro6;PD 1.7W;VGS +/-12V

IRLMS6702TRPBF,MOSFET, P-CHANN EL, -20V, -2.3A, 200 MOHM, 5.

Single P-Channel 20 V 0.375 Ohm 8.8 nC HEXFET® Power Mosfet - MICRO-6

HEXFET POWER MOSFET Power Field-Effect Transistor, 2.4A I(D), 20V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

P Channel Mosfet, -20V, 2.4A Micro6; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.4A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Gate Source Threshold Voltage Max:700Mv Rohs Compliant: Yes |Infineon Technologies IRLMS6702TRPBF

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

MOSFET, P, LOGIC, TSOP-6; Transistor Polarity:P Channel; Continuous Drain Current Id:2.4A; Drain Source Voltage Vds:20V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-700mV; Power Dissipation Pd:1.7W; Transistor Case Style:TSOP; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:-2.4A; Current Temperature:25°C; Full Power Rating Temperature:25°C; On State Resistance @ Vgs = 4.5V:200mohm; P Channel Gate Charge:5.8nC; Package / Case:TSOP; Power Dissipation Pd:1.7W; Power Dissipation Pd:1.7W; Pulse Current Idm:13A; SMD Marking:2C; Termination Type:SMD; Voltage Vds:-20V; Voltage Vds Typ:-20V; Voltage Vgs Max:-700mV; Voltage Vgs Rds on Measurement:-4.5V; Voltage Vgs th Min:700mV