onsemi FDC6327C

Name: onsemi FDC6327C
Brand: onsemi
SKU: FDC6327C

Dual N/P-Channel 20 V 0.08 Ohm 2.5 V Specified PowerTrench Mosfet - SSOT-6

$ 0.358

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12h

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Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDC6327C.

IHS

Datasheet10 pages4 years ago

Datasheet9 pages17 years ago

Upverter

element14 APAC

onsemi

Farnell

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-100%

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Supply Chain

Country of OriginPhilippines

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.21.00.95

Introduction Date1999-12-08

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FDC6327C provided by its distributors.

Dual N/P-Channel 20 V 0.08 Ohm 2.5 V Specified PowerTrench Mosfet - SSOT-6

Future Electronics

ON SEMICONDUCTOR - FDC6327C - Dual MOSFET, Complementary N and P Channel, 20 V, 2.7 A, 0.069 ohm, SuperSOT, Surface Mount

Fly-Wing Technology

Small Signal Field-Effect Transistor, 2.7A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

MOSFET, DUAL, NP, SUPERSOT-6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:1.9A; Drain Source Voltage Vds:20V; On Resistance Rds(on):250mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:900mV; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Cont Current Id N Channel 2:2.7A; Cont Current Id P Channel:1.6A; Current Id Max:2.7A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:2; On State Resistance N Channel Max:80mohm; On State Resistance P Channel Max:170mohm; Package / Case:SuperSOT-6; Power Dissipation Pd:960mW; Power Dissipation Pd:960mW; Pulse Current Idm:8A; SMD Marking:3273; Termination Type:SMD; Uni / Bi Directional Polarity:NP; Voltage Vds:20V; Voltage Vds Typ:20V; Voltage Vgs Max:900mV; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Max:1.5V; Voltage Vgs th P Channel Max:1.5V

element14 APAC

These N & P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

Fairchild Semiconductor