onsemi FDC6306P

Name: onsemi FDC6306P
Brand: onsemi
SKU: FDC6306P

Dual P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -1.9A, 170mΩ

$ 0.27

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Distributor		SKU		Min	Pkg
Avnet		FDC6306P	39,000	3K				0.193	4d
Verical	2	FDC6306P	6,000	3K				0.180
Arrow Electronics		FDC6306P	6,000	3K				0.193
Master Electronics		FDC6306P	3,000	100		0.358	0.269	0.196
Onlinecomponents.com		FDC6306P	3,000	100	Bulk	0.358	0.269	0.196

Inventory History

3 month trend: -0.63%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDC6306P.

IHS

Datasheet5 pages27 years ago

Upverter

JRH Electronics

Future Electronics

onsemi

Inventory History

3 month trend:

-0.63%

CAD Models

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Supply Chain

Country of OriginPhilippines

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1999-02-01

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FDC6306P provided by its distributors.

Dual P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -1.9A, 170mΩ

onsemi

MOSFET 2P-CH 20V 1.9A SSOT6 / Trans MOSFET P-CH 20V 1.9A 6-Pin TSOT-23 T/R

Win Source

Dual P-Channel 20 V 0.170 Ohm 2.5 V Specified PowerTrench Mosfet - SSOT-6

Future Electronics

These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

Fairchild Semiconductor

MOSFET, DUAL, PP, SUPERSOT-6; Module Configuration:Dual; Transistor Polarity:P Channel; Continuous Drain Current Id:1.9A; Drain Source Voltage Vds:20V; On Resistance Rds(on):170mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-900mV; Power Dissipation Pd:960mW; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:-1.9A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:2; Package / Case:SuperSOT-6; Power Dissipation Pd:960mW; Power Dissipation Pd:960mW; Pulse Current Idm:5A; SMD Marking:FCD6306P; Termination Type:SMD; Uni / Bi Directional Polarity:PP; Voltage Vds:20V; Voltage Vds Typ:-20V; Voltage Vgs Max:-900mV; Voltage Vgs Rds on Measurement:-4.5V; Voltage Vgs th Max:-1.5V

element14 APAC