onsemi FDC6303N

Name: onsemi FDC6303N
Brand: onsemi
SKU: FDC6303N

Transistor MOSFET Array Dual N-CH 25V 0.68A 6-Pin TSOT-23 T/R

$ 0.214

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Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
Avnet	2	FDC6303N	2,237	7143						0.129	5d
Newark	2	FDC6303N	315	1	Cut Tape	0.752	0.468	0.301	0.265	0.265
Verical	2	FDC6303N	3,000	3K						0.159
Arrow Electronics		FDC6303N	3,000	3K						0.161
Master Electronics		FDC6303N	3,000	250					0.200	0.146

Inventory History

3 month trend: +48.19%

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDC6303N.

IHS

Datasheet5 pages28 years ago

Datasheet0 pages0 years ago

Upverter

onsemi

Farnell

element14 APAC

Inventory History

3 month trend:

+48.19%

CAD Models

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Supply Chain

Country of OriginPhilippines

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1997-06-01

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FDC6303N provided by its distributors.

Transistor MOSFET Array Dual N-CH 25V 0.68A 6-Pin TSOT-23 T/R

Avnet Japan

DIGITAL FET, DUAL N-CHANNEL Small Signal Field-Effect Transistor, 0.68A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

MOSFET, DUAL, N, SMD, SUPERSOT-6; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:900mW; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:680mA; Current Id Max:680mA; Drain Source Voltage Vds:25V; Module Configuration:Dual; On Resistance Rds(on):450mohm; Package / Case:SuperSOT-6; Power Dissipation Pd:900mW; Termination Type:SMD; Voltage Vds Typ:25V; Voltage Vgs Max:800mV; Voltage Vgs Rds on Measurement:4.5V

element14 APAC

These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this one N-Channel FET can replace several digital transistors with different bias resistors like the IMHxA series.

Fairchild Semiconductor