onsemi FDC6303N

Name: onsemi FDC6303N
Brand: onsemi
SKU: FDC6303N

Transistor MOSFET Array Dual N-CH 25V 0.68A 6-Pin TSOT-23 T/R

$ 0.197

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SKU

Min

Pkg

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Avnet

FDC6303N

2,237

7143

USD

16h

Cut Tape

USD

USD

USD

250

USD

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDC6303N.

IHS

Datasheet5 pages28 years ago

Datasheet0 pages0 years ago

Upverter

onsemi

Farnell

element14 APAC

Inventory History

3 month trend:

-100%

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Supply Chain

Country of OriginPhilippines

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1997-06-01

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FDC6303N provided by its distributors.

Transistor MOSFET Array Dual N-CH 25V 0.68A 6-Pin TSOT-23 T/R

Avnet Japan

onsemi NChannel EnhancedMOSTube, Vds=25 V, 680 mA, SOT-23encapsulation, surface mount, 6Pin

UnikeyIC

DIGITAL FET, DUAL N-CHANNEL Small Signal Field-Effect Transistor, 0.68A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

Chip Resistor - Surface Mount 75mOhm Wide 1206 (3216 Metric), 0612 ±1% 0/ +150ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ Res Thick Film 1206 0.075 Ohm 1% 1W 0ppm/C to 150ppm/C Molded SMD Punched Carrier T/R

Utmel Electronic

MOSFET, DUAL, N, SMD, SUPERSOT-6; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:900mW; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:680mA; Current Id Max:680mA; Drain Source Voltage Vds:25V; Module Configuration:Dual; On Resistance Rds(on):450mohm; Package / Case:SuperSOT-6; Power Dissipation Pd:900mW; Termination Type:SMD; Voltage Vds Typ:25V; Voltage Vgs Max:800mV; Voltage Vgs Rds on Measurement:4.5V

element14 APAC

These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this one N-Channel FET can replace several digital transistors with different bias resistors like the IMHxA series.

Fairchild Semiconductor