onsemi FDBL0240N100
$ 3.71
Production
Price and Stock
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Min
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Inventory History
3 month trend: +0.45%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2015-11-24
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Descriptions
Descriptions of onsemi FDBL0240N100 provided by its distributors.
N-Channel PowerTrench® MOSFET, 100V, 210A, 2.8mΩ
Trans MOSFET N-CH 100V 210A 9-Pin(8+Tab) HPSOF T/R
场效应管, MOSFET, N沟道, 100V, 210A, 175度 C, 300W;
MOSFET N-Channel Power Trench MOSFET
MOSFET, N-CH, 100V, 210A, 175DEG C, 300W;
Power Field-Effect Transistor, 210A I(D), 100V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-299A
Fet 100V 2.8 Mohm Toll |Onsemi FDBL0240N100
RES SMD 40.2K OHM 1% 1/10W 0603
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: +0.45%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
MountSurface Mount
Number of Pins8
Number of Terminals2
Weight850.0521 mg
Technical
Continuous Drain Current (ID)210 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance2.8 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance8.755 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.5 W
Rds On Max2.8 mΩ
Schedule B8541290080
Turn-Off Delay Time44 ns
Turn-On Delay Time26 ns
Dimensions
Height2.4 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
REACH SVHCNo
RoHSCompliant
Compliance Statements