onsemi FDB8444
$ 1.17
EOL
Inventory History
3 month trend: -0.81%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2006-02-21
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
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Descriptions
Descriptions of onsemi FDB8444 provided by its distributors.
Transistor,mosfet,n-Channel,40V V(Br)Dss,70A I(D),to-263Ab Rohs Compliant: Yes |Onsemi FDB8444
N-Channel PowerTrench® MOSFET, 40V, 70A, 5.5mΩ
Trans MOSFET N-CH 40V 70A Automotive 3-Pin(2+Tab) D2PAK T/R
N-Channel 40 V 9.9 mOhm Surface Mount PowerTrench Mosfet - TO-263AB
Power Field-Effect Transistor, 70A I(D), 40V, 9.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: -0.81%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageDPAK
MountSurface Mount
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)70 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance9.9 Ω
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance8.035 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation167 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation167 W
Rds On Max5.5 mΩ
Resistance5.5 MΩ
Rise Time78 ns
Turn-Off Delay Time48 ns
Turn-On Delay Time12 ns
Dimensions
Height5.08 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements