Descriptions of onsemi D45H11G provided by its distributors.
80V 2W 40@4A,1V 10A PNP TO-220 Bipolar Transistors - BJT ROHS
Bipolar Transistors (BJT); D45H11G; ON SEMICONDUCTOR; PNP; 3; 80 V; 10 A
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Power Bipolar Transistor, PNP, 10 A, 80 V
D44 Series 80 V 10 A PNP Complementary Silicon Power Transistor - TO-220AB
Trans GP BJT PNP 80V 10A 2000mW 3-Pin(3+Tab) TO-220AB Tube
Bipolar Transistors - BJT 10A 80V 50W PNP
Power Transistor, TO-220, PNP, 80V
onsemi PNPTransistor, TO-220ABencapsulation, Through hole mounting, Maximum DC collector current-10 A, maximum collector-emission voltage-80 V
TRANSISTOR, PNP, TO-220; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -80V; Transition Frequency ft: 40MHz; Power Dissipation Pd: 70W; DC Collector Current: -10A; DC Current Gain hFE: 60hFE; Transistor Case St
. . . for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators converters and power amplifiers.
Bipolar Transistor, Pnp -80V To-220; Transistor Polarity:Pnp; Collector Emitter Voltage Max:80V; Continuous Collector Current:10A; Power Dissipation:70W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:40Mhzrohs Compliant: Yes |Onsemi D45H11G.