onsemi BSR14

Name: onsemi BSR14
Brand: onsemi
SKU: BSR14

40V 350MW 35@0.1MA, 10V 800MA NPN SOT-23 Bipolar (bjt) Rohs

$ 0.125

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
Avnet	3	BSR14	75,000	3K						0.073	3d
Future Electronics	5	BSR14	2,595	1	Cut Tape	0.410	0.410	0.285	0.245	0.200
Newark	3	BSR14	230	1	Cut Tape	0.478	0.478	0.204	0.145	0.145
Verical	3	BSR14	590	20				0.170	0.113	0.073
Arrow Electronics	2	BSR14	590	1		0.431	0.226	0.170	0.124	0.124

Inventory History

3 month trend: +183%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi BSR14.

Master Electronics

Datasheet0 pages0 years ago

Upverter

Farnell

Fairchild Semiconductor

onsemi

Inventory History

3 month trend:

+183%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiBSR14

NexperiaBSR14,215

Price @ 1000

$ 0.125

$ 0.118

Stock

2,772,481

648,819

Authorized Distributors

Mount

Surface Mount

Case/Package

SOT-23-3

SOT-23

Polarity

NPN

Collector Emitter Breakdown Voltage

40 V

Max Collector Current

800 mA

Transition Frequency

300 MHz

Collector Emitter Saturation Voltage

1 V

hFE Min

Power Dissipation

350 mW

250 mW

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.21.00.95

Introduction Date2000-02-01

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi BSR14 provided by its distributors.

40V 350mW 35@0.1mA,10V 800mA NPN SOT-23 Bipolar (BJT) ROHS

EBEE

Bipolar Transistors (BJT); BSR14; ON SEMICONDUCTOR; NPN; 3; 40 V; 800 mA

Maritex

Trans GP BJT NPN 40V 0.8A 350mW 3-Pin SOT-23 T/R / TRANS NPN 40V 0.8A SOT23

Win Source

BSR14 Series 40 V CE Breakdown 0.8 A NPN General Purpose Amplifier - SOT-23

Future Electronics

NPN SWITCHING TRANSISTOR Small Signal Bipolar Transistor, 0.8A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB

ComSIT Distribution GmbH

40V 350mW 800mA 100@150mA10V 300MHz 1V@500mA50mA NPN -55¡Í~+150¡Í@(Tj) SOT-23 Bipolar Transistors - BJT ROHS

Dasenic

TRANSISTOR, FULL REEL; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 350mW; DC Collector Current: 800mA; DC Current Gain hFE: 300; No. of Pins: 3

Farnell

This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. See BCW65C for characteristics.

Fairchild Semiconductor

Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 800 / Collector-Emitter Voltage (Vceo) V = 40 / DC Current Gain (hFE) = 35 / Collector-Base Voltage (Vcbo) V = 75 / Emitter-Base Voltage (Vebo) V = 6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 300 / Power Dissipation (Pd) mW = 350 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 2 / Reflow Temperature Max. °C = 260

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