onsemi BS170-D27Z

N-Channel 60 V 500 mA 830 mW Through Hole Metal Oxide Mosfet - TO-92-3

FAIRCHILD SEMICONDUCTORBS170_D27ZN CHANNEL MOSFET, 60V, 500mA, TO-92

N-Channel Small Signal MOSFET 60V, 500mA, 5Ω

Trans MOSFET N-CH 60V 0.5A 3-Pin TO-92 T/R

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

N CHANNEL MOSFET, 60V, 500mA, TO-92; Cha; N CHANNEL MOSFET, 60V, 500mA, TO-92; Channel Type: N Channel; Drain Source Voltage Vds: 60V; Continuous Drain Current Id: 500mA; Transistor Mounting: Through Hole; Rds(on) Test Volta

These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Product Highlights: High density cell design for extremely low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability.