onsemi BD676G

Name: onsemi BD676G
Brand: onsemi
SKU: BD676G

Medium Power PNP Darlington Bipolar Power Transistor

$ 0.659

Obsolete

Manufacturer Page Datasheet

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Distributor	SKU		Min	Pkg
Rochester Electronics	BD676G	3,746					0.334	0.278	0.248	21h
RS (Formerly Allied Electronics)	BD676G	0	1	Bulk	1.150	1.040	1.040	1.040	1.040	12h
element14 APAC	BD676G.	0	1		1.154*	0.713*	0.605*	0.434*	0.402*	10h
Farnell	BD676G.	0	1		1.036*	0.917*	0.759*	0.759*	0.759*	16h
Win Source	WS-BD676G	400	90				0.644	0.429	0.429	21h

Inventory History

3 month trend: +0.00%

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi BD676G.

IHS

Datasheet5 pages12 years ago

Upverter

Farnell

onsemi

Newark

Inventory History

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+0.00%

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1999-01-01

Lifecycle StatusObsolete (Last Updated: 2 days ago)

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 2 days ago)

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Descriptions

Descriptions of onsemi BD676G provided by its distributors.

Medium Power PNP Darlington Bipolar Power Transistor

onsemi

BD Series 45 V 4 A Medium Power Silicon PNP Darlington Transistor - TO-225

Future Electronics

Power Bipolar Transistor, 4A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin

IHS

ON SEMI BD676G PNP DARLINGTON TRANSISTOR, 4 A 45 V HFE:750, 3-PIN TO-225

RS (Formerly Allied Electronics)

DARLINGTON TRANSISTOR, TO-225AA; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 45V; Transition Frequency ft: 200MHz; Power Dissipation Pd: 40W; DC Collector Current: 4A; DC Current Gain hFE: 750hFE; Transistor

Farnell

This series of plastic medium-power silicon PNP Darlington transistors can be used as output devices in complementary general-purpose amplifier applications.

North Star Micro

Darlington Transistor, Pnp, -45V, To-225; Transistor, Polaridad:Pnp; Tensión Colector Emisor V(Br)Ceo:45V; Frecuencia De Transición Ft:200Mhz; Disipación De Potencia Pd:40W; Corriente De Colector Dc:4A; Núm. De Contactos:3 |Onsemi BD676G

Newark

Transistor Polarity = PNP / Configuration = Single / Continuous Collector Current (Ic) A = 4 / Collector-Emitter Voltage (Vceo) V = 45 / DC Current Gain (hFE) = 750 / Collector-Base Voltage (Vcbo) V = 45 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Power Dissipation (Pd) W = 40 / Package Type = TO-225 / Pins = 3 / Mounting Type = Through Hole / Packaging = Bulk Box / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 2.5 / Reflow Temperature Max. °C = 260

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