Omron EE-SV3-DS
Optical Switches, Transmissive, Phototransistor Output PHOTO MICROSENSOR
$ 5.15
Obsolete
Inventory History
3 month trend: -3.72%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Introduction Date1994-07-01
Lifecycle StatusObsolete (Last Updated: 3 months ago)
LTB Date2026-03-31
LTD Date2026-06-30
Descriptions
Descriptions of Omron EE-SV3-DS provided by its distributors.
Optical Switches, Transmissive, Phototransistor Output PHOTO MICROSENSOR
940nm Through-Beam 3.4mm 4¦Ìs,4¦Ìs Phototransistor PCB, 2.1mm*500¦Ìm
Transmissive Types with Phototransistor Output, PCB mounting, RoHS
Omron SCT
Transistor Output Slotted Switch, 1-Channel, 3.4mm Slot Width
Photointerrupter Transmissive 3.4mm Phototransistor 4-Pin
PHOTO MICROSENSOR | Omron Electronic Components EE-SV3-DS
Photo micro sensor interrupters
SENS OPTO SLOT 3.4MM TRANS SOLDER
SENSOR OPT SLOT PHOTOTRAN PCB MT
Manufacturer Aliases
Omron has several brands around the world that distributors may use as alternate names. Omron may also be known as the following names:
- Omron Electronics
- Omron Electronics Inc-EMC Div
- Omron Automation and Safety
- Omron Electronic Components
- OMR
- OMROM
- OMRO
- OMRON INDUSTRIAL AUTOMATION
- OMRON STI
- OMRON Corporation
- OMRN
- OMRON CORP
- OMRON INDUSTRIAL
- Omron Automation
- OMRON-IA
- OMRON ELECTRONICS INC
- Omron Automation & Safety
- Omron Electronics LLC
- Omron Electronics Inc-IA Div
- Omron Electronics Inc-ECB Div
- OMRON Electronic Components LLC
- OMRON SAFETY
- OMRON ELECTRONI
- OMRONELEC
- OMRON GMBH
Inventory History
3 month trend: -3.72%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
MountSolder, Through Hole
Number of Pins4
Technical
Collector Emitter Breakdown Voltage30 V
Collector Emitter Voltage (VCEO)30 V
Dark Current200 nA
Fall Time4 µs
Forward Current50 mA
Forward Voltage1.2 V
Max Collector Current20 mA
Max Operating Temperature85 °C
Min Operating Temperature-25 °C
Number of Circuits1
Output ConfigurationPhototransistor
PackagingBulk
Power Dissipation100 mW
Response Time4 µs
Reverse Voltage (DC)4 V
Rise Time4 µs
Sensing Distance3.4 mm
Wavelength940 nm
Dimensions
Width200 µm