Nexperia BC847CW,115
$ 0.031
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | BC847CW,115 | 54,000 | 3K | Tape & Reel | ||||||||
| Rochester Electronics | BC847CW,115 | 1,990 | 9h | |||||||||
| Verical | BC847CW,115 | 12,000 | 9K | |||||||||
| Arrow Electronics | BC847CW,115 | 5 | 163 | |||||||||
| DigiKey | 1727-4312-1-ND | 108 | 1 | Cut Tape |
Inventory History
3 month trend: +18.10%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
CAD Models
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|---|---|---|---|
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Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.031
$ 0.036
$ 0.036
Stock
4,145,681
4,399,181
4,399,181
Authorized Distributors
6
6
6
Mount
Surface Mount
-
-
Case/Package
SOT-323
SC
SC
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
50 V
45 V
45 V
Max Collector Current
100 mA
100 mA
100 mA
Transition Frequency
100 MHz
100 MHz
100 MHz
Collector Emitter Saturation Voltage
600 mV
600 mV
600 mV
hFE Min
420
420
420
Power Dissipation
200 mW
150 mW
150 mW
Supply Chain
Country of OriginMainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1999-04-23
Lifecycle StatusProduction (Last Updated: 2 years ago)
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)
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Descriptions
Descriptions of Nexperia BC847CW,115 provided by its distributors.
Bipolar Transistors (BJT); BC847CW,115; NEXPERIA; NPN; 3; 45 V; 100 mA
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
45V 200mW 100mA NPN SOT-323(SC-70) Bipolar Transistors - BJT ROHS
Transistors - Bipolar (BJT) - Single SC-70, SOT-323 1 (Unlimited) Tape & Reel (TR) Surface Mount NPN 420 @ 2mA 5V 400mV @ 5mA, 100mA 150°C TJ 15nA ICBO TRANS NPN 45V 0.1A SOT323
Bipolar Transistor, Npn, 45V, 100Ma, 3-Sot-323; Transistor Polarity:Npn; Collector Emitter Voltage Max:45V; Continuous Collector Current:100Ma; Power Dissipation:200Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins Rohs Compliant: Yes |Nexperia BC847CW,115.
TRANSISTOR, NPN, 45V, 0.1A, SOT-323; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:200mW; DC Collector Current:100mA; DC Current Gain hFE:420; Operating Temperature Min:-65°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-323; No. of Pins:3; MSL:(Not Available); SVHC:No SVHC (20-Jun-2013)
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 100 / Collector-Emitter Voltage (Vceo) V = 45 / DC Current Gain (hFE) = 800 / Collector-Base Voltage (Vcbo) V = 50 / Emitter-Base Voltage (Vebo) V = 6 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 200 / Package Type = SOT-323 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 400 / Base Emitter Saturation Voltage Max. (Vbe(sat)) mV = 900
Manufacturer Aliases
Nexperia has several brands around the world that distributors may use as alternate names. Nexperia may also be known as the following names:
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NXP/NEXPERIA
- Nexperia USA
- NEXP
- Nexperi
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- NEXPERIA(Nexperia)
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia(Ahn Se)
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/N
- NEXPERIA/PHILIPS
- NEXPERIA USA INC (UA)
- NEX-NXP
- NEXPERIA USA INC (VA)
- NEXPERIA (FORMERLY NXP) (4001801)
Inventory History
3 month trend: +18.10%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageSOT-323
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight4.535924 g
Technical
Ambient Temperature Range High150 °C
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage600 mV
Collector Emitter Voltage (VCEO)45 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min420
Max Breakdown Voltage45 V
Max Collector Current100 mA
Max Frequency100 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Operating Temperature-65 °C
Number of Elements1
PackagingCut Tape
PolarityNPN
Power Dissipation200 mW
Schedule B8541210080
TerminationSMD/SMT
Transition Frequency100 MHz
Dimensions
Height1.1 mm
Length2.2 mm
Width1.35 mm
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements