Microchip TN5325K1-G
$ 0.465
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Inventory History
3 month trend: -2.98%
CAD Models
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Alternate Parts
0 parts available
CAD Models
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Supply Chain
Projected EOL Date2034-05-13
Country of AssemblyThailand
Country of FabricationUnited States of America
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.0095
Lifecycle StatusProduction (Last Updated: 13 hours ago)
Manufacturer Lifecycle StatusREL (Last Updated: 13 hours ago)
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Descriptions
Descriptions of Microchip TN5325K1-G provided by its distributors.
Trans MOSFET N-CH 250V 0.15A 3-Pin SOT-23 T/R
TN5325 Series 250 V 7 Ohm N-Channel Enhancement-Mode Vertical DMOS FET -TO-236AB
MOSFET N-CH 250V 150MA TO236AB N-Channel 250 V 150mA (Ta) 360mW (Ta) Surface Mount TO-236AB (SOT23)
Small Signal Field-Effect Transistor, 0.15A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, 250V, 0.15A, 150DEG C, 0.36W; Transistor Polarity:N Channel; Continuous Drain Current Id:150mA; Drain Source Voltage Vds:250V; On Resistance Rds(on):7ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; P
Manufacturer Aliases
Microchip has several brands around the world that distributors may use as alternate names. Microchip may also be known as the following names:
- Microchip Technology
- MICROCHIP TECHNOLOGY INC
- MICROCHI
- MICROC
- MICROCH
- MICROCHIP TECH
- MCHP
- MCRCH
- MCP
- MICROHIP
- MICROSHIP
- MICCHP
- MICROCHP
- MTech
- Microchip Technology / Atmel
- MICROCIHIP
- Microchip Technologies
- Microchip / Microsemi
- MICORCHIP
- MICHROCHIP
- Atmel/Microchip
- MICRIOCHIP
- Atmel (Microchip Technology)
- MICROCHIP (ATMEL)
- MICROCHIP TECHNOLOGY (VA)
- Microchip Technology Inc.
Inventory History
3 month trend: -2.98%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Pins3
Weight1.437803 g
Technical
Ambient Temperature Range High150 °C
Continuous Drain Current (ID)150 mA
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance7 Ω
Drain to Source Voltage (Vdss)250 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
HS Code8541.29.0055, 8541.29.0095
Input Capacitance110 pF
Max Operating Temperature150 °C
Max Power Dissipation360 mW
Min Operating Temperature-55 °C
Number of Channels1
Power Dissipation360 mW
Rds On Max7 Ω
Rise Time15 ns
Schedule B8541210080
Turn-Off Delay Time25 ns
Turn-On Delay Time20 ns
Dimensions
Height1.12 mm
Length2.9 mm
Width1.3 mm