Infineon SPD30P06PGBTMA1
Transistor, Mosfet, P-channel, -60V, 0.075 Ohm, -30A, TO252-3, Sipmos Power
$ 0.605
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Inventory History
3 month trend: -5.32%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon SPD30P06PGBTMA1.
CAD Models
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Supply Chain
Country of OriginAustria, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-02-19
Lifecycle StatusProduction (Last Updated: 3 months ago)
LTB Date2026-09-30
LTD Date2027-03-31
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Trans MOSFET N-CH 60V 29A 3-Pin(2+Tab) DPAK T/R / OptiMOS® Power-Transistor
Descriptions
Descriptions of Infineon SPD30P06PGBTMA1 provided by its distributors.
TRANSISTOR, MOSFET, P-CHANNEL, -60V, 0.075 OHM, -30A, TO252-3, SIPMOS POWER
Single P-Channel 60 V 75 mOhm 32 nC SIPMOS® Power Mosfet - TO-252-3
Power Field-Effect Transistor, 30A I(D), 60V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:30A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:125W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon Technologies SPD30P06PGBTMA1.
Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = 30 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 75 / Gate-Source Voltage V = 20 / Fall Time ns = 20 / Rise Time ns = 11 / Turn-OFF Delay Time ns = 30 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Power Dissipation (Pd) W = 125
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: -5.32%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-252
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)30 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance75 mΩ
Drain to Source Voltage (Vdss)-60 V
Fall Time20 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.228 nF
Max Dual Supply Voltage-60 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation125 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance75 mΩ
Package Quantity2500
PackagingTape & Reel
Power Dissipation125 W
Rise Time11 ns
Schedule B8541290080
Turn-Off Delay Time30 ns
Turn-On Delay Time13 ns
Dimensions
Height2.5 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon SPD30P06PGBTMA1.
Compliance
Environmental Classification
China RoHSNon-Compliant
Halogen FreeNot Halogen Free
Lead FreeContains Lead
REACH SVHCNo
RoHSCompliant
Compliance Statements