Infineon SPB02N60C3ATMA1
$ 0.619
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
Distributor
SKU
Min
Pkg
Bulk Pricing
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon SPB02N60C3ATMA1.
CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-11-16
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2014-09-15
LTD Date2015-03-15
Related Parts
onsemiFQB5N60CTM-WS
600V 4.5A 2´Î@10V2.25A 100W 4V@250uA 6.5pF@25V N Channel 515pF@25V 15nC@10V -55¡Í~+150¡Í@(Tj) D2PAK MOSFETs ROHS
InfineonSPB04N60S5ATMA1
MOSFET N-CH 600V 4.5A TO-263 / Trans MOSFET N-CH 600V 4.5A 3-Pin(2+Tab) D2PAK T/R
Descriptions
Descriptions of Infineon SPB02N60C3ATMA1 provided by its distributors.
25W(Tc) 20V 3.9V@ 80¦ÌA 12.5nC@ 10 V 1N 650V 3¦¸@ 1.1A,10V 200pF@25V TO-263 10mm*9.25mm*4.4mm
Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
SPB02N60 600V COOLMOS N-CHANNEL POWER M;
Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)1.8 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance3 Ω
Drain to Source Voltage (Vdss)650 V
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance200 pF
Max Dual Supply Voltage600 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation25 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel
Power Dissipation25 W
Rds On Max3 Ω
Rise Time3 ns
Turn-Off Delay Time68 ns
Turn-On Delay Time6 ns
Dimensions
Height4.5 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon SPB02N60C3ATMA1.
Compliance
Environmental Classification
Halogen FreeHalogen Free
Lead FreeContains Lead
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements