Infineon IRLZ24NSPBF

Name: Infineon IRLZ24NSPBF
Brand: Infineon
SKU: IRLZ24NSPBF

In a Tube of 50, IRLZ24NSPBF N-Channel MOSFET, 18 A, 55 V HEXFET, 3-Pin D2PAK Infineon

$ 1.79

Obsolete

Manufacturer Page Datasheet

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRLZ24NSPBF	0	1	Bulk	1.990	1.790	1.790	1.790	1.790	16h
Win Source	WS-IRLZ24NSPBF	139	70				0.758	0.506	0.506	1h
Worldway Electronics	IRLZ24NSPBF	10,969	7	Tube		0.077	0.074	0.070	0.070	1d
Anlinkda	IRLZ24NSPBF	57,055			0.243	0.217	0.186	0.182	0.175	6h
Chipsmall Limited	IRLZ24NSPBF	20,000	1		0.681	0.454	0.272	0.227	0.227	6h

CAD Models

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Alternate Parts

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Datasheets & Documents

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IHS

Datasheet11 pages21 years ago

element14 APAC

Newark

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1997-09-22

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

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Descriptions

Descriptions of Infineon IRLZ24NSPBF provided by its distributors.

In a Tube of 50, IRLZ24NSPBF N-Channel MOSFET, 18 A, 55 V HEXFET, 3-Pin D2PAK Infineon

Fly-Wing Technology

Single N-Channel 55 V 0.06 Ohm 15 nC HEXFET® Power Mosfet - D2PAK

Future Electronics

55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Trans MOSFET N-CH 55V 18A 3-Pin(2+Tab) D2PAK

Avnet

MOSFET, 55V, 18A, 60 MOHM, 10 NC QG, LOGIC LEVEL, D2-PAK

RS (Formerly Allied Electronics)

HEXFET POWER MOSFET Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

ComSIT Distribution GmbH

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

Infineon

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:18A; On Resistance, Rds(on):60mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2-PAK ;RoHS Compliant: Yes

Newark

N CHANNEL MOSFET, 55V, 18A, D2-PAK; Tran; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:55V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:3.8W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Avalanche Single Pulse Energy Eas:68mJ; Capacitance Ciss Typ:480pF; Current Id Max:18A; Package / Case:D2-PAK; Power Dissipation Pd:3.8W; Power Dissipation Pd:3.8W; Pulse Current Idm:72A; Reverse Recovery Time trr Typ:60ns; SMD Marking:Z24NS; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V; Voltage Vgs th Min:1V

element14 APAC