Infineon IRLR2705TRLPBF

Name: Infineon IRLR2705TRLPBF
Brand: Infineon
SKU: IRLR2705TRLPBF

Mosfet, Power; N-ch; Vdss 55V; Rds(on) 0.04 Ohm; Id 28A; D-pak (TO-252AA); Pd 68W; -55DE

$ 0.373

Obsolete

Datasheet

Manufacturer Page

Price and Stock

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Non-Authorized Stocking Distributors

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Distributor

SKU

Min

Pkg

Bulk Pricing

Future Electronics

IRLR2705TRLPBF

3,000

Tape & Reel

USD

USD

RS (Formerly Allied Electronics)

IRLR2705TRLPBF

Bulk

USD

21h

Weyland Electronics Group Pte. Ltd.

IRLR2705TRLPBF

8,300

Tape & Reel

USD

0.912

Inventory History

3 month trend: -19.11%

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRLR2705TRLPBF.

element14 APAC

Datasheet11 pages21 years ago

IHS

DigiKey

RS (Formerly Allied Electronics)

Inventory History

3 month trend:

-19.11%

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2004-03-02

Lifecycle StatusObsolete (Last Updated: 8 months ago)

LTB Date2024-09-30

LTD Date2025-03-31

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Descriptions

Descriptions of Infineon IRLR2705TRLPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.04Ohm;ID 28A;D-Pak (TO-252AA);PD 68W;-55de

RS (Formerly Allied Electronics)

Single N-Channel 55 V 0.04 Ohm 25 nC HEXFET® Power Mosfet - D2PAK

Future Electronics

MOSFET N-CH 55V 28A DPAK N-Channel 55 V 28A (Tc) 68W (Tc) Surface Mount TO-252AA (DPAK)

Eurochip Technologies LTD

55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

IHS

68W(Tc) 16V 2V@ 250µA 25nC@ 5 V 1individualNChannel 55V 40mΩ@ 17A,10V 28A 880pF@25V DPAK，TO-252AA SMD mount 6.5mm*6.22mm*2.3mm

UnikeyIC

Mosfet, N-Ch, 55V, To-252Aa-3; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:55V; On Resistance Rds(On):0.04Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Rohs Compliant: Yes |Infineon Technologies IRLR2705TRLPBF

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 28 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 40 / Gate-Source Voltage V = 16 / Fall Time ns = 29 / Rise Time ns = 100 / Turn-OFF Delay Time ns = 21 / Turn-ON Delay Time ns = 8.9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 68

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