Infineon IRLR024ZPBF
Obsolete
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CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-03-10
Lifecycle StatusObsolete (Last Updated: 9 months ago)
LTB Date2013-07-17
LTD Date2014-01-17
Related Parts
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Descriptions
Descriptions of Infineon IRLR024ZPBF provided by its distributors.
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 46 Milliohms;ID 16A;D-Pak (TO-252AA);PD 35W
MOSFET N-CH 55V 16A DPAK N-Channel 55 V 16A (Tc) 35W (Tc) Surface Mount TO-252AA (DPAK)
Power Field-Effect Transistor, 16A I(D), 55V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N, LOGIC, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:55V; On Resistance Rds(on):58mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:35W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:16A; Package / Case:DPAK; Power Dissipation Pd:35W; Power Dissipation Pd:35W; Pulse Current Idm:64A; SMD Marking:IRLR024Z; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)16 A
Current Rating16 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance58 mΩ
Drain to Source Voltage (Vds)55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time16 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance380 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation35 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Channels1
Number of Elements1
Power Dissipation35 W
Rds On Max58 mΩ
Recovery Time24 ns
Resistance58 MΩ
Rise Time43 ns
TerminationSMD/SMT
Threshold Voltage3 V
Turn-Off Delay Time19 ns
Turn-On Delay Time8.2 ns
Voltage Rating (DC)55 V
Dimensions
Height2.2606 mm
Length6.7056 mm
Width6.22 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
Compliance Statements