Infineon IRLML0060TRPBF

Name: Infineon IRLML0060TRPBF
Brand: Infineon
SKU: IRLML0060TRPBF

60V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS

$ 0.191

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Distributor		SKU		Min	Pkg
Avnet		IRLML0060TRPBF	132,000	3K						0.046	1d
Newark	3	IRLML0060TRPBF	1,148	1	Cut Tape	0.618	0.393	0.265	0.265	0.265
Future Electronics	2	IRLML0060TRPBF	402,000	3K	Tape & Reel					0.100
Rutronik		TMOSS6799	81,000	3K						0.146	6h
Arrow Electronics	4	IRLML0060TRPBF	55,499	1		0.598	0.367	0.200	0.200	0.200

Inventory History

3 month trend: -9.39%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRLML0060TRPBF.

Newark

Datasheet10 pages9 years ago

IHS

element14 APAC

SOS electronic

iiiC

Inventory History

3 month trend:

-9.39%

CAD Models

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2009-12-02

Lifecycle StatusProduction (Last Updated: 1 month ago)

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Descriptions

Descriptions of Infineon IRLML0060TRPBF provided by its distributors.

60V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS

Infineon SCT

Single N-Channel 60 V 116 mOhm 2.5 nC 1.25 W Silicon SMT Mosfet - SOT-23

Future Electronics

Power MOSFET, N Channel, 60 V, 2.7 A, 0.092 ohm, SOT-23, Surface Mount

EBV Elektronik

MOSFET, 60V, 2.7A, 92 MOHM, 2.5 NC QG, SOT-23

RS (Formerly Allied Electronics)

Trans MOSFET N-CH 60V 2.7A 3-Pin SOT-23 T/R

Verical

Power Field-Effect Transistor, 2.7A I(D), 60V, 0.092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Semicontronic

MOSFET, N CH, 60V, 2.7A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:60V; On Resistance Rds(on):78mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:1.25W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.7A; Power Dissipation Pd:1.25W; Voltage Vgs Max:16V

element14 APAC

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 2.7 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 116 / Gate-Source Voltage V = 16 / Fall Time ns = 4.2 / Rise Time ns = 6.3 / Turn-OFF Delay Time ns = 6.8 / Turn-ON Delay Time ns = 5.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 1.25

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