Infineon IRLB3036PBF

MOSFET N-CH 60V 195A TO220AB N-Channel 60 V 195A (Tc) 380W (Tc) Through Hole TO-220AB

Single N-Channel 60 V 2.4 mOhm 91 nC HEXFET® Power Mosfet - TO-220-3

In a Pack of 2, N-Channel MOSFET, 270 A, 60 V, 3-Pin TO-220AB Infineon IRLB3036PBF

60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

MOSFET, 60V, 370A, 2.4 MOHM, 91 NC QG, LOGIC LEVEL, TO220

Trans MOSFET N-CH 60V 270A 3-Pin(3+Tab) TO-220AB

MOSFET Operating temperature: -55...+175 °C Drive: logic level Housing type: TO-220 Polarity: N Power dissipation: 380 W

Power Field-Effect Transistor, 195A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

MOSFET, N-CH 60V 195A TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:165A; Drain Source Voltage Vds:60V; On Resistance Rds(on):2.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:380W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:195A; Package / Case:TO-220AB; Power Dissipation Pd:380W; Power Dissipation Pd:380W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:60V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.