Infineon IRL8113SPBF

Name: Infineon IRL8113SPBF
Brand: Infineon
SKU: IRL8113SPBF

IRL8113SPBF N-channel MOSFET Transistor, 105 A, 30 V, 3-Pin D2PAK

$ 3.39

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRL8113SPBF	0	750	Bulk				3.390	1.810	4h
Win Source	WS-IRL8113SPBF	10,700	15				3.064	2.747	2.747	13h
Worldway Electronics	IRL8113SPBF	3,415	7	Tube		1.098	1.064	1.008	1.008	12h
Anlinkda	IRL8113SPBF	64,672			0.161	0.144	0.124	0.124	0.113	11h
RC Electronics	IRL8113SPBF	58,104	1		0.120	0.110	0.100	0.090	0.090	11h

CAD Models

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Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRL8113SPBF.

IHS

Datasheet14 pages21 years ago

Datasheet13 pages21 years ago

Future Electronics

DigiKey

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRL8113SPBF

InfineonIRL8113STRLPBF

Price @ 1000

$ 3.39

$ 3.29

Stock

162,419

19,439

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

Drain to Source Voltage (Vdss)

30 V

Continuous Drain Current (ID)

42 A

Threshold Voltage

Rds On Max

6 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

110 W

Input Capacitance

2.84 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-01-08

Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRL8113SPBF provided by its distributors.

IRL8113SPBF N-channel MOSFET Transistor, 105 A, 30 V, 3-Pin D2PAK

RS (Formerly Allied Electronics)

Single N-Channel 30 V 110 W 23 nC Hexfet Power Mosfet Surface Mount - D2PAK-3

Future Electronics

30V Single N-Channel HEXFET Power MOSFET in a D2Pak package, D2PAK-3, RoHS

Infineon SCT

Trans MOSFET N-CH 30V 105A 3-Pin(2+Tab) D2PAK

Avnet

Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Logic Level

Infineon

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:105A; On Resistance, Rds(on):6mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes

Newark

MOSFET, N, 30V, 105A, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:105A; Resistance, Rds On:0.006ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.25V; Case Style:D2-PAK; Termination Type:SMD; Case Style, Alternate:D2-PAK; Current, Idm Pulse:420A; Power Dissipation:110W; Power, Pd:110W; Resistance, Rds on @ Vgs = 10V:0.006ohm; Thermal Resistance, Junction to Case A:1.32°C/W; Voltage, Vds:30V; Voltage, Vds Max:30V; Voltage, Vgs th Max:2.25V

Farnell