Infineon IRG4PC50KPBF

Name: Infineon IRG4PC50KPBF
Brand: Infineon
SKU: IRG4PC50KPBF

IRG4PC50KPBF Series 600 V 30 A N-Channel UltraFast IGBT - TO-247AC

$ 6.92

Obsolete

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRG4PC50KPBF	0	150	Bulk				6.920	6.560	4h
Farnell		IRG4PC50KPBF	0	1		4.954*	4.954*	4.954*	4.954*	4.954*	11h
Microchip USA	2	IRG4PC50KPBF	369	150	Bulk				13.520	13.520	3d
Component Stockers USA		IRG4PC50KPBF	61			2.220	2.220	2.220	2.220	2.220	>1wk
Win Source	2	WS-IRG4PC50K	3,000	8			7.788	5.192	5.192	5.192	13h

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRG4PC50KPBF.

Upverter

Datasheet10 pages5 years ago

IHS

Factory Futures

Newark

DigiKey

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1997-08-29

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2009-08-19

LTD Date2010-02-19

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Descriptions

Descriptions of Infineon IRG4PC50KPBF provided by its distributors.

IRG4PC50KPBF Series 600 V 30 A N-Channel UltraFast IGBT - TO-247AC

Future Electronics

SINGLE IGBT, 600V, 52A; Transistor Type:IGBT; DC Collector Current:52A; Collector Emitter Voltage Vces:2.19V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Min:-55°C; No. of Pins:3; MSL:-

element14 APAC

IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:52A; Collector Emitter Saturation Voltage, Vce(sat):2.2V; Power Dissipation, Pd:200W; Package/Case:TO-247AC ;RoHS Compliant: Yes

Newark

IGBT, 600V, 52A, TO-247AC; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:52A; Voltage, Vce Sat Max:1.84V; Power Dissipation:200W; Case Style:TO-247AC; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:104A; No. of Pins:3; Power, Pd:200W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:120ns; Time, Fall Max:120ns; Time, Rise:34ns; Time, Short Circuit Withstand Min:10µs; Transistors, No. of:1

Farnell