Infineon IRG4BC40UPBF

Name: Infineon IRG4BC40UPBF
Brand: Infineon
SKU: IRG4BC40UPBF

600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package, TO220-3, RoHS

$ 6.48

Obsolete

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRG4BC40UPBF	0	1	Bulk	7.360	6.480	6.480	6.480	6.480	3h
Farnell		IRG4BC40UPBF	0	1		2.139*	2.018*	1.884*	1.763*	1.763*	1h
Microchip USA		IRG4BC40U	313	600	Tray				1.732	1.732	3d
Component Stockers USA		IRG4BC40UPBF	743			1.990	1.990	1.860	1.860	1.860	>1wk
Win Source	2	WS-IRG4BC40UPBF	29	12				3.829	3.433	3.433	15h

Inventory History

3 month trend: +0.00%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRG4BC40UPBF.

Newark

Datasheet8 pages16 years ago

Datasheet9 pages25 years ago

Datasheet8 pages25 years ago

Upverter

Factory Futures

RS (Formerly Allied Electronics)

DigiKey

Inventory History

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+0.00%

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1996-09-30

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2009-02-11

LTD Date2009-08-11

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Descriptions

Descriptions of Infineon IRG4BC40UPBF provided by its distributors.

600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Trans IGBT Chip N-CH 600V 40A 160000mW 3-Pin(3+Tab) TO-220AB Tube

Verical

IRG4BC40UPbF Series 600 V 20 A N-Channel Ultrafast Speed IGBT - TO-220AB

Future Electronics

Target Applications: Air Conditioner; Dishwasher; Fan; PFC; Pump; Washing Machine

Infineon

Transistor; IGBT; 600V; 40A; 160W; -55+150 deg.C; THT; TO220

Maritex

Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB

Semicontronic

IGBT, TO-220; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:40A; Current Temperature:25°C; Device Marking:IRG4BC40UPBF; Fall Time tf:180ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:160A; Rise Time:19ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

element14 APAC