Infineon IRFS7434TRLPBF

Name: Infineon IRFS7434TRLPBF
Brand: Infineon
SKU: IRFS7434TRLPBF

40V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package, D2PAK-3, RoHS

$ 1.101

EOL

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
Newark		IRFS7434TRLPBF	767	1	Cut Tape	3.280	2.140	1.480	1.310	1.120
Arrow Electronics		IRFS7434TRLPBF	800	1		2.958	1.976	1.387	1.101	1.101
DigiKey	3	IRFS7434TRLPBFCT-ND	14,150	1	Cut Tape	3.860	2.503	1.732	1.732	1.732
RS (Formerly Allied Electronics)		IRFS7434TRLPBF	0	800	Bulk				1.730	1.730	22h
Avnet		IRFS7434TRLPBF	0	800					0.931	0.873	1d

Inventory History

3 month trend: +7.63%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFS7434TRLPBF.

IHS

Datasheet12 pages11 years ago

Newark

Future Electronics

Inventory History

3 month trend:

+7.63%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2013-09-17

Lifecycle StatusEOL (Last Updated: 1 month ago)

LTB Date2026-09-30

LTD Date2027-03-31

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Descriptions

Descriptions of Infineon IRFS7434TRLPBF provided by its distributors.

40V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Single N-Channel 40 V 1.6 mOhm 216 nC HEXFET® Power Mosfet - D2PAK

Future Electronics

Trans MOSFET N-CH Si 40V 320A 3-Pin(2+Tab) D2PAK T/R

Verical

Power Field-Effect Transistor, 195A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Semicontronic

Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability

Infineon

MOSFET, N-CH, 40V, 195A, TO-263AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 195A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.00125ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V;

Farnell