Infineon IRFS3006TRL7PP

Name: Infineon IRFS3006TRL7PP
Brand: Infineon
SKU: IRFS3006TRL7PP

Single N-Channel 60 V 2.1 mOhm 300 nC HEXFET® Power Mosfet - D2PAK-7

$ 2.184

NRND

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
DigiKey	3	IRFS3006TRL7PPCT-ND	3,212	1	Cut Tape	5.780	3.848	2.755	2.755	2.755
Avnet	2	IRFS3006TRL7PP	800	800					1.803	1.722	20h
Newark	2	IRFS3006TRL7PP	766	1	Cut Tape	5.100	3.510	2.740	2.650	2.390
Future Electronics	2	IRFS3006TRL7PP	124,800	800	Tape & Reel				2.140	2.090
Arrow Electronics		IRFS3006TRL7PP	780	1		4.791	3.440	2.708	2.252	2.252

Inventory History

3 month trend: -17.83%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFS3006TRL7PP.

Newark

Datasheet9 pages17 years ago

Inventory History

3 month trend:

-17.83%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRFS3006TRL7PP

InfineonIRFS3006-7PPBF

Price @ 1000

$ 2.184

$ 6.94

Stock

644,283

129,094

Authorized Distributors

Mount

Surface Mount

Case/Package

TO-263-7

D2PAK

Drain to Source Voltage (Vdss)

60 V

Continuous Drain Current (ID)

240 A

Threshold Voltage

4 V

Rds On Max

2.1 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

375 W

Input Capacitance

8.85 nF

Supply Chain

Lifecycle StatusNRND (Last Updated: 3 months ago)

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Descriptions

Descriptions of Infineon IRFS3006TRL7PP provided by its distributors.

Single N-Channel 60 V 2.1 mOhm 300 nC HEXFET® Power Mosfet - D2PAK-7

Future Electronics

60V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7-Pin package, D2PAK7P, RoHS

Infineon SCT

Power MOSFET, N Channel, 60 V, 240 A, 0.0015 ohm, TO-263 (D2PAK), Surface Mount

Avnet

Trans MOSFET N-CH 60V 293A 7-Pin(6+Tab) D2PAK T/R

Verical

MOSFET, N-CH, 60V, 240A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:240A; Source Voltage Vds:60V; On Resistance

element14 APAC

HEXFET POWER MOSFET Power Field-Effect Transistor, 240A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263

ComSIT Distribution GmbH

Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive

Infineon

MOSFET, N-CH, 60V, 240A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 240A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0015ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 375W; Transistor Case Style: TO-263; No. of Pins: 7Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Farnell