Infineon IRFR5410TRLPBF

Name: Infineon IRFR5410TRLPBF
Brand: Infineon
SKU: IRFR5410TRLPBF

Mosfet, Power; P-ch; Vdss -100V; Rds(on) 0.205 Ohm; Id -13A; D-pak (TO-252AA); Pd 66W

$ 0.686

Obsolete

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
Arrow Electronics		IRFR5410TRLPBF	14	1		0.999	0.566	0.566	0.566	0.566
RS (Formerly Allied Electronics)		IRFR5410TRLPBF	0	3K	Bulk					2.280	8h
Farnell	2	IRFR5410TRLPBF	0	1	Cut Tape	1.615*	1.233*	0.959*	0.712*	0.712*	19h
Mouser		942-IRFR5410TRLPBF	8,687	1	Tape & Reel	2.360	1.500	1.010	0.807	0.655
Win Source		WS-IRFR5410TRLPBF	51,480	135					0.309	0.297	20h

Inventory History

3 month trend: -0.23%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFR5410TRLPBF.

Newark

Datasheet11 pages21 years ago

IHS

RS (Formerly Allied Electronics)

DigiKey

Inventory History

3 month trend:

-0.23%

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-06-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2022-10-15

LTD Date2023-04-15

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Descriptions

Descriptions of Infineon IRFR5410TRLPBF provided by its distributors.

MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.205Ohm;ID -13A;D-Pak (TO-252AA);PD 66W

RS (Formerly Allied Electronics)

Single P-Channel 100V 0.205 Ohm 58 nC HEXFET® Power Mosfet - TO-252AA

Future Electronics

-100V Single P-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

IHS

Transistor Polarity:p Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:13A; On Resistance Rds(On):0.205Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon

Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = 13 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 205 / Gate-Source Voltage V = 20 / Fall Time ns = 46 / Rise Time ns = 58 / Turn-OFF Delay Time ns = 45 / Turn-ON Delay Time ns = 15 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 66

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