Infineon IRFR3410TRLPBF

Single N-Channel 100 V 39 mOhm 37 nC HEXFET® Power Mosfet - DPAK

100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Power Field-Effect Transistor, 30A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

MOSFET, N-CH, 100V, 31A, TO-252AA; Transistor Polarity: N Channel; Continuous Drain Current Id: 31A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.034ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 110W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 31 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 39 / Gate-Source Voltage V = 20 / Fall Time ns = 13 / Rise Time ns = 27 / Turn-OFF Delay Time ns = 40 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 110