Infineon IRFR3410PBF

Name: Infineon IRFR3410PBF
Brand: Infineon
SKU: IRFR3410PBF

MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 34Milliohms; ID 31A; D-Pak (TO-252AA); -55deg

$ 1.33

Obsolete

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRFR3410PBF	0	5	Bulk		1.470	1.330	1.330	1.330	19h
Win Source	WS-IRFR3410PBF	43,640	125					0.321	0.321	8h
Worldway Electronics	IRFR3410PBF	18,290	7	Tube		1.410	1.383	1.330	1.303	7h
ZTZ Technology Limited	IRFR3410PBF	28,950			0.600	0.552	0.504	0.408	0.408	>1wk
Chipsmall Limited	IRFR3410PBF	21,400	1		0.930	0.620	0.372	0.310	0.310	11h

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFR3410PBF.

Newark

Datasheet11 pages21 years ago

Datasheet10 pages20 years ago

IHS

TME

RS (Formerly Allied Electronics)

Jameco

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2002-09-23

Lifecycle StatusObsolete (Last Updated: 5 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

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Descriptions

Descriptions of Infineon IRFR3410PBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 34Milliohms;ID 31A;D-Pak (TO-252AA);-55deg

RS (Formerly Allied Electronics)

Single N-Channel 100 V 39 mOhm 37 nC HEXFET® Power Mosfet - TO-252AA

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IRFR3410PBF,MOSFET, 100V, 31A, 39 MOHM, 37 NC QG, D-PAK<AZ

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100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 30A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

IHS

Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Infineon

MOSFET, N, 100V, 31A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:100V; On Resistance Rds(on):39mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:110W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:31A; Junction to Case Thermal Resistance A:1.4°C/W; Package / Case:DPAK; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:125A; SMD Marking:IRFR3410; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC