Infineon IRFR2407TRPBF

MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 0.0218Ohm;ID 42A;D-Pak (TO-252AA);PD 110W

Single N-Channel 75 V 0.026 Ohm 74 nC HEXFET® Power Mosfet - TO-252AA

75V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

HEXFET POWER MOSFET Power Field-Effect Transistor, 30A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:42A; On Resistance, Rds(on):26mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:D-Pak; Power Dissipation, Pd:110W ;RoHS Compliant: Yes

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 42 / Drain-Source Voltage (Vds) V = 75 / ON Resistance (Rds(on)) mOhm = 26 / Gate-Source Voltage V = 20 / Fall Time ns = 66 / Rise Time ns = 90 / Turn-OFF Delay Time ns = 65 / Turn-ON Delay Time ns = 16 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 110