Infineon IRFR024NTRLPBF
$ 0.422
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
Distributor
SKU
Min
Pkg
Bulk Pricing
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-03-02
Lifecycle StatusObsolete (Last Updated: 6 months ago)
LTB Date2024-09-30
LTD Date2025-03-31
Related Parts
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Descriptions
Descriptions of Infineon IRFR024NTRLPBF provided by its distributors.
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.075Ohm;ID 17A;D-Pak (TO-252AA);PD 45W
Single N-Channel 55V 0.075 Ohm 20 nC HEXFET® Power Mosfet - TO-252AA
MOSFET N-CH 55V 17A DPAK N-Channel 55 V 17A (Tc) 45W (Tc) Surface Mount PG-TO252-3
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
45W(Tc) 20V 4V@ 250µA 20nC@ 10 V 1individualNChannel 55V 75mΩ@ 10A,10V 17A 370pF@25V TO-252 SMD mount 6.5mm*6.22mm*2.3mm
N CHANNEL MOSFET, 55V, 17A, DPAK; TRANSI; N CHANNEL MOSFET, 55V, 17A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:55V; On Resistance Rds(on):75mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. of Pins:3Pins
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technical Specifications
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)17 A
Current Rating17 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance75 mΩ
Drain to Source Voltage (Vdss)55 V
Fall Time27 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance370 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation45 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
On-State Resistance75 mΩ
Package Quantity3000
Power Dissipation38 W
Rds On Max75 mΩ
Resistance75 MΩ
Rise Time34 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time19 ns
Turn-On Delay Time4.9 ns
Voltage Rating (DC)55 V
Dimensions
Height2.3876 mm
Length6.7056 mm
Width6.22 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Compliance Statements