Infineon IRFR024NPBF

Name: Infineon IRFR024NPBF
Brand: Infineon
SKU: IRFR024NPBF

Mosfet, Power; N-ch; Vdss 55V; Rds(on) 0.075 Ohm; Id 17A; D-pak (TO-252AA); Pd 45W

$ 1.5

Obsolete

Manufacturer Page Datasheet

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRFR024NPBF	0	1	Bulk	2.550	2.260	1.970	1.500	1.500	15h
Farnell	IRFR024NPBF	0	1		1.058*	0.837*	0.492*	0.394*	0.387*	2h
Sensible Micro	IRFR024NPBF	93					0.392	0.363	0.363	7d
Win Source	WS-IRFR024NPBF	85,750	265					0.171	0.147	3h
Worldway Electronics	IRFR024NPBF	19,449	7	Tube		0.038	0.037	0.035	0.035	2h

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFR024NPBF.

Newark

Datasheet11 pages21 years ago

Datasheet11 pages27 years ago

Datasheet10 pages27 years ago

IHS

Upverter

RS (Formerly Allied Electronics)

Jameco

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1996-02-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

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Descriptions

Descriptions of Infineon IRFR024NPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.075Ohm;ID 17A;D-Pak (TO-252AA);PD 45W

RS (Formerly Allied Electronics)

Single N-Channel 55 V 0.075 Ohm 20 nC HEXFET® Power Mosfet - TO-252AA

Future Electronics

55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

HEXFET POWER MOSFET Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

ComSIT Distribution GmbH

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Infineon

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:17A; On Resistance, Rds(on):75mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D-PAK ;RoHS Compliant: Yes

Newark

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 17 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 75 / Gate-Source Voltage V = 20 / Fall Time ns = 27 / Rise Time ns = 34 / Turn-OFF Delay Time ns = 19 / Turn-ON Delay Time ns = 4.9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 45

Distrelec

MOSFET, N, 55V, 16A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:55V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:38W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:17A; Current Temperature:25°C; External Depth:10.5mm; External Length / Height:2.55mm; External Width:6.8mm; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3.3°C/W; No. of Transistors:1; Package / Case:DPAK; Power Dissipation Pd:38W; Power Dissipation Pd:38W; Pulse Current Idm:68A; SMD Marking:IRFR024N; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC