Infineon IRFPS3815PBF
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
Distributor
SKU
Min
Pkg
Bulk Pricing
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-03-14
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2020-10-31
LTD Date2021-04-30
Related Parts
InfineonIRFB4228PBF
150V Single N-Channel PDP Switch HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Descriptions
Descriptions of Infineon IRFPS3815PBF provided by its distributors.
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.015Ohm;ID 105A;Super-247;PD 441W;gFS 47S
150V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) package, SUPER247-3, RoHS
Infineon SCT
Single N-Channel 150 V 0.015 Ohm 260 nC HEXFET® Power Mosfet - TO-274AA
Trans MOSFET N-CH 150V 105A 3-Pin(3+Tab) TO-274AA Tube
HEXFET POWER MOSFET Power Field-Effect Transistor, 105A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:150V; Continuous Drain Current, Id:105A; On Resistance, Rds(on):15mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:Super-247 ;RoHS Compliant: Yes
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technical Specifications
Physical
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)105 A
Current Rating105 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance15 mΩ
Drain to Source Voltage (Vdss)150 V
Element ConfigurationSingle
Fall Time60 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance6.81 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation441 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance15 mΩ
Package Quantity25
PackagingBulk
Power Dissipation441 W
Rds On Max15 mΩ
Rise Time130 ns
Turn-Off Delay Time51 ns
Turn-On Delay Time22 ns
Voltage Rating (DC)150 V
Dimensions
Height24.8 mm
Length16.0782 mm
Width5.3 mm
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements