Infineon IRFB7545PBF
$ 0.53
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Inventory History
3 month trend: -15.47%
CAD Models
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Alternate Parts
0 parts available
CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-01-16
Lifecycle StatusProduction (Last Updated: 3 months ago)
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Descriptions
Descriptions of Infineon IRFB7545PBF provided by its distributors.
MOSFET Transistor N-Channel 60 V 95A (Tc) 125W (Tc) Through Hole TO-220
60V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package, TO220-3, RoHS
Infineon SCT
Single N-Channel 60 V 5.9 mOhm 75 nC HEXFET® Power Mosfet - TO-220-3
Mosfet, N Channel, 60V, 95A, To-220Ab-3; |Infineon Technologies IRFB7545PBF.
Infineon NChannelMOSTube, Vds=60 V, 95 A, TO-220encapsulation, Through hole mounting
Power Field-Effect Transistor, 95A I(D), 60V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: -15.47%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)95 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance5.9 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time43 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.01 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation125 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance5.9 mΩ
Package Quantity1000
Power Dissipation125 W
Rds On Max5.9 mΩ
Rise Time72 ns
Schedule B8541290080
Threshold Voltage3.7 V
Turn-Off Delay Time44 ns
Turn-On Delay Time12 ns
Dimensions
Height19.8 mm
Length10.67 mm
Width4.83 mm
Compliance
Environmental Classification
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
Compliance Statements