Infineon IRFB7540PBF

Name: Infineon IRFB7540PBF
Brand: Infineon
SKU: IRFB7540PBF

60V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package, TO220-3, RoHS

$ 0.588

EOL

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Rochester Electronics

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16h

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3 month trend: +24.71%

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Datasheets & Documents

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Newark

Datasheet14 pages11 years ago

Datasheet13 pages11 years ago

Datasheet12 pages12 years ago

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3 month trend:

+24.71%

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2014-01-16

Lifecycle StatusEOL (Last Updated: 2 months ago)

LTB Date2026-09-30

LTD Date2027-03-31

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Descriptions

Descriptions of Infineon IRFB7540PBF provided by its distributors.

60V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package, TO220-3, RoHS

Infineon SCT

Single N-Channel 60 V 5.1 mOhm 88 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

MOSFET N-CH 60V 110A TO220 N-Channel 60 V 110A (Tc) 160W (Tc) Through Hole TO-220

Eurochip Technologies LTD

Trans MOSFET N-CH 60V 110A 3-Pin(3+Tab) TO-220AB Tube

Verical

MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 160 W

Distrelec

HEXFET POWER MOSFET Power Field-Effect Transistor, 110A I(D), 60V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

Infineon NChannel EnhancedMOSTube StrongIRFETseries, Vds=60 V, 110 A, TO-220ABencapsulation, Through hole mounting, 3Pin

UnikeyIC

Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:110A; On Resistance Rds(On):0.0042Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V; Msl:- Rohs Compliant: Yes

Newark

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon