Infineon IRFB3006GPBF
$ 1.868
EOL
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Inventory History
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CAD Models
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Alternate Parts
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CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-06-29
Lifecycle StatusEOL (Last Updated: 3 months ago)
LTB Date2026-09-30
LTD Date2027-03-31
Related Parts
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Transistor: N-MOSFET; unipolar; 60V; 270A; 2.1mohm; 375W; -55+175 deg.C; THT; TO220
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Descriptions
Descriptions of Infineon IRFB3006GPBF provided by its distributors.
60V Single N-Channel HEXFET Power MOSFET in a Lead-Free and Halogen Free TO-220AB package
Single N-Channel 60 V 2.5 mOhm 200 nC HEXFET® Power Mosfet - TO-220-3
MOSFET, 60V, 270A, 2.5 MOHM, 200 NC QG,TO220AB, HALOGEN-FREE
Trans MOSFET N-CH 60V 270A 3-Pin(3+Tab) TO-220AB Tube
Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive
Power Field-Effect Transistor, 195A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N CHANNEL MOSFET, HEXFET, 60V, 270A, TO-; N CHANNEL MOSFET, HEXFET, 60V, 270A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:270A; Drain Source Voltage Vds:60V; On Resistance Rds(on):21mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)195 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance2.5 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time189 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance8.97 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation375 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance2.5 mΩ
Package Quantity1000
Power Dissipation375 W
Rds On Max2.5 mΩ
Rise Time182 ns
Turn-Off Delay Time118 ns
Turn-On Delay Time16 ns
Dimensions
Height20.56 mm
Length10.668 mm
Width4.826 mm
Compliance
Environmental Classification
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
Compliance Statements